Teledyne e2v HiRel Announces New High-Speed Products Expanding Company’s Space Qualified Suite

MILPITAS, California. Teledyne e2v HiRel announces two new products to be added to its space applications portfolio. Both devices are ideally suited for LEO and MEO constellations as well as other aerospace and defence power applications where ultra-low SWaP is required.

The new space screened versions of its popular 650 V, 60 A high-reliability gallium nitride high electron mobility transistors (GaN HEMTs) are presented. The new parts go through NASA Level 1 screening flow and can be brought up to full Level 1 conformance with extra qualification testing if desired. Typical applications include battery management, DC-DC converters, and space motor drives.

At the same time, the new TD99102 UltraCMOS^® High-speed FET and GaN transistor driver offers a very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne HiRel’s 100 V high-reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital Point-of-Load (POL) modules and space motor drives.

A new transistor series: GaN technology for high-performance space-qualified devices

Two new parts are available, both space-grade, 650 V, enhancement mode, top-side cooled GaN-on-Silicon power transistors. The properties of GaN allow for high current, high voltage breakdown and high switching frequency, enabling high efficiency and high power density designs. The two models are:

• TDG650E601TSP Space GaN E-mode Transistor with 900 V transient drain-to-source maximum voltage
• TDG650E602TSP Space GaN E-mode Transistor with 750 V transient drain-to-source maximum voltage

Each is available with options for EAR99 or European sourcing.

Teledyne e2v HiRel’s GaN HEMTs feature single wafer lot traceability, extended temperature performance from -55 to +125 °C, and low inductance, low thermal resistance packaging.

“Our GaN HEMT product family has been very popular with customers, and we have had many requests for catalogue versions with standard space screening. Our new 650 V, 60 A parts offer 100% screening off-the-shelf, and we can do full level 1 qualification with customer SCDs,”

said Mont Taylor, VP of Business Development for Teledyne e2v HiRel.

Gallium nitride devices have revolutionized power conversion in other industries and are now available in radiation tolerant, plastic encapsulated packaging that has undergone stringent reliability and electrical testing to help ensure mission critical success. The release of these new GaN HEMTs delivers to customers the efficiency, size, and power-density benefits required in critical aerospace and defense power applications.

Both of these new devices are available for ordering and immediate purchase from Teledyne e2v HiRel or an authorized distributor.

The new TD99102 UltraCMOS: efficient power consumption with ultrafast switching transition speeds

The TD99102 is an integrated high-speed driver designed to control the gates of external power devices such as enhancement-mode gallium nitride (GaN) High Electron Mobility Transistor (HEMT) and power MOSFETs. The outputs of the TD99102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 20 MHz. The TD99102 is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth. High switching speeds result in smaller peripheral components and enable innovative designs for high-reliability orbital motor driver and POL applications. The TD99102 is available as a bumped, flip chip die to enable the minimum design footprint required for high-speed switching power applications.

The TD99102 is manufactured on Peregrine’s UltraCMOS® process, a patented advanced form of silicon-on-insulator (SOI) technology, offering the performance of GaAs with the economy and integration of conventional CMOS. It features 100 kRad (Si) Total Ionizing Dose (TID), Single Event Latch-up (SEL) immunity and dead-time control, the new product offers 2A peak source and 4A peak sink current.

“We’ve been asked for drivers that get the most out of our 100 V GaN HEMT transistors. The TD99102’s fast edge speeds and radiation tolerance make them ideal for the latest LEO and MEO constellations where efficiency is key,”

said Mont Taylor.

The TD99102 is available for ordering and immediate purchase from Teledyne e2v HiRel or an authorized distributor.

About Teledyne e2v Hirel Electronics

Teledyne HiRel’s innovations lead developments in space, transportation, defense, and industrial markets. HiRel’s unique approach involves listening to the market and application challenges of customers and partnering with them to provide innovative standard, semi-custom or fully custom solutions, bringing increased value to their systems. For more information, visit http://www.tdehirel.com.

About Teledyne Defense Electronics

Serving Defense, Space and Commercial sectors worldwide, Teledyne Defense Electronics offers a comprehensive portfolio of highly engineered solutions that meet your most demanding requirements in the harshest environments. Manufacturing both custom and off-the-shelf product offerings, our diverse product lines meet emerging needs for key applications for avionics, energetics, electronic warfare, missiles, radar, satcom, space, and test and measurement. www.teledynedefenseelectronics.com/.